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IS61C6416AL IS62C6416AL
IS64C6416AL IS65C6416AL
ISSI
JANUARY 2005
(R)
64K x 16 HIGH-SPEED CMOS STATIC RAM
FEATURES
IS61C6416AL and IS64C6416AL * High-speed access time: 12 ns, 15ns * Low Active Power: 175 mW (typical) * Low Standby Power: 1 mW (typical) CMOS standby IS62C6416AL and IS65C6416AL * High-speed access time: 35 ns, 45ns * Low Active Power: 50 mW (typical) * Low Standby Power: 100 W (typical) CMOS standby * TTL compatible interface levels * Single 5V 10% power supply * Fully static operation: no clock or refresh required * Available in 44-pin SOJ package and 44-pin TSOP (Type II) * Commercial, Industrial and Automotive temperature ranges available * Lead-free available
DESCRIPTION The ISSI IS61C6416AL, IS62C6416AL, IS64C6416AL and
IS65C6416AL are high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits. They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61C6416AL, IS62C6416AL, IS64C6416AL and IS65C6416AL are packaged in the JEDEC standard 44-pin 400-mil SOJ and 44-pin TSOP (Type II).
FUNCTIONAL BLOCK DIAGRAM
A0-A15
DECODER
64K x 16 MEMORY ARRAY
VDD GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT
COLUMN I/O
CE OE WE UB LB
Copyright (c) 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
CONTROL CIRCUIT
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 01/17/05
1
IS61C6416AL IS62C6416AL
IS64C6416AL IS65C6416AL
ISSI
(R)
PIN CONFIGURATIONS
44-Pin SOJ
A15 A14 A13 A12 A11 CE I/O0 I/O1 I/O2 I/O3 VDD GND I/O4 I/O5 I/O6 I/O7 WE A10 A9 A8 A7 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A0 A1 A2 OE UB LB I/O15 I/O14 I/O13 I/O12 GND VDD I/O11 I/O10 I/O9 I/O8 NC A3 A4 A5 A6 NC
44-Pin TSOP (Type II)
A15 A14 A13 A12 A11 CE I/O0 I/O1 I/O2 I/O3 VDD GND I/O4 I/O5 I/O6 I/O7 WE A10 A9 A8 A7 NC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
A0 A1 A2 OE UB LB I/O15 I/O14 I/O13 I/O12 GND VDD I/O11 I/O10 I/O9 I/O8 NC A3 A4 A5 A6 NC
PIN DESCRIPTIONS
A0-A15 I/O0-I/O15 CE OE WE Address Inputs Data Inputs/Outputs Chip Enable Input Output Enable Input Write Enable Input LB UB NC VDD GND Lower-byte Control (I/O0-I/O7) Upper-byte Control (I/O8-I/O15) No Connection Power Ground
2
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 01/17/05
IS61C6416AL IS62C6416AL
TRUTH TABLE
Mode Not Selected Output Disabled Read
IS64C6416AL IS65C6416AL
ISSI
LB X X H L H L L H L UB X X H H L L H L L I/O PIN I/O0-I/O7 I/O8-I/O15 High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN High-Z High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN VDD Current ISB1, ISB2 ICC1, ICC2 ICC1, ICC2
(R)
WE X H X H H H L L L
CE H L L L L L L L L
OE X H X L L L X X X
Write
ICC1, ICC2
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Storage Temperature Power Dissipation DC Output Current (LOW) Value -0.5 to +7.0 -65 to +150 1.5 20 Unit V C W mA
Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE (IS61C/62C6416AL)
Range Commercial Industrial Ambient Temperature 0C to +70C -40C to +85C VDD 5V 10% 5V 10%
OPERATING RANGE (IS64C/65C6416AL)
Range Automotive Ambient Temperature -40C to +125C VDD 5V 10%
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 01/17/05
3
IS61C6416AL IS62C6416AL
CAPACITANCE(1,2)
Symbol CIN COUT
IS64C6416AL IS65C6416AL
ISSI
Conditions VIN = 0V VOUT = 0V Max. 5 7 Unit pF pF
(R)
Parameter Input Capacitance Output Capacitance
Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25C, f = 1 MHz, VDD = 5.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter VOH VOL VIH VIL ILI Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage GND VIN VDD Com. Ind. Auto. Com. Ind. Auto. Test Conditions VDD = Min., IOH = -4.0 mA VDD = Min., IOL = 8.0 mA Min. 2.4 -- 2.2 -0.3 -1 -2 -5 -1 -2 -5 Max. -- 0.4 VDD + 0.5 0.8 1 2 5 1 2 5 Unit V V V V A
ILO
Output Leakage
GND VOUT VDD Outputs Disabled
A
Note: 1. VIL = -3.0V for pulse width less than 10 ns.
4
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 01/17/05
IS61C6416AL IS62C6416AL
IS64C6416AL IS65C6416AL
ISSI
-12 ns Min. Max. Com. Ind. Auto. Com. Ind. Auto. typ.(2) Com. Ind. Auto. Com. Ind. Auto. typ.(2) -- -- -- -- -- -- -- 40 45 -- 50 55 -- 35 1 1 -- -- -- -- 350 400 -- 200 450 1 A mA 60 50 mA -15 ns Min. Max. Unit mA
(R)
IS61C6416AL/IS64C6416AL POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter ICC1 VDD Operating Supply Current VDD Dynamic Operating Supply Current Test Conditions VDD = VDD MAX., CE = VIL IOUT = 0 mA, f = 0 VDD = VDD MAX., CE = VIL IOUT = 0 mA, f = fMAX
ICC2
ISB1
TTL Standby Current (TTL Inputs)
VDD = VDD MAX., VIN = VIH or VIL CE VIH, f = 0 VDD = VDD MAX., CE VDD - 0.2V, VIN VDD - 0.2V, or VIN 0.2V, f = 0
ISB2
CMOS Standby Current (CMOS Inputs)
Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at VDD = 5V, TA = 25% and not 100% tested.
IS62C6416AL/IS65C6416AL POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter ICC Average operating Current VDD Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) Test Conditions CE = VIL, VIN = VIH or VIL, I I/O= 0 mA VDD = Max., CE = VIL IOUT = 0 mA, f = fMAX VIN = VIH or VIL VDD = Max., VIN = VIH or VIL, CE VIH, f=0 VDD = Max., CE VDD - 0.2V, VIN VDD - 0.2V, or VIN VSS + 0.2V, f = 0 Com. Ind. Auto. Com. Ind. Auto. Com. Ind. Auto. Com. Ind. Auto. -35 ns Min. Max. -- -- -- -- -- -- -- -- 10 15 -- 35 40 -- 1 1.5 -- 5 10 -- 15 2 A 45 mA 20 mA -45 ns Min. Max. Unit mA
ICC1
ISB1
ISB2
Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 01/17/05
5
IS61C6416AL IS62C6416AL
IS64C6416AL IS65C6416AL
ISSI
-15 Min. Max. 15 -- -- 3 -- -- 0 0 0 2 -- 0 0 15 -- 15 7 6 -- 8 -- 6 7 -- -35 Min. Max. 35 -- -- 3 -- -- 0 3 0 3 -- 0 0 35 -- 35 10 10 -- 10 -- 35 10 -- -45 Min. Max. 45 -- -- 3 -- -- 0 5 0 5 -- 0 0 45 -- 45 20 15 -- 15 -- 45 15 -- Unit ns ns ns ns ns ns ns ns ns ns ns ns
(R)
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter Read Cycle Time Address Access Time Output Hold Time CE Access Time OE Access Time OE to High-Z Output OE to Low-Z Output CE to High-Z Output CE to Low-Z Output LB, UB Access Time LB, UB to High-Z Output LB, UB to Low-Z Output -12 Min. Max. 12 -- -- 3 -- -- 0 0 0 2 -- 0 0 12 -- 12 6 6 -- 7 -- 6 6 --
tRC tAA tOHA tACE tDOE tHZOE(2) tLZOE(2) tHZCE(2 tLZCE(2) tBA tHZB tLZB
Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100% tested. 3. Not 100% tested.
AC TEST CONDITIONS
Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0V to 3.0V 3 ns 1.5V See Figures 1 and 2
AC TEST LOADS
480 5V
5V 480
OUTPUT 30 pF Including jig and scope 255
OUTPUT 5 pF Including jig and scope 255
Figure 1
Figure 2
6
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 01/17/05
IS61C6416AL IS62C6416AL
IS64C6416AL IS65C6416AL
ISSI
t RC
(R)
AC WAVEFORMS READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = VIL, UB or LB = VIL)
ADDRESS
t AA t OHA
DOUT
PREVIOUS DATA VALID
t OHA
DATA VALID
READ1.eps
READ CYCLE NO. 2(1,3)
t RC
ADDRESS
t AA
OE
t OHA
t DOE
CE
t HZOE
t LZOE t ACE t LZCE t HZCE
LB, UB
DOUT
HIGH-Z
t LZB
t BA
DATA VALID
t HZB
UB_CEDR2.eps
Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE, UB, or LB = VIL. 3. Address is valid prior to or coincident with CE LOW transition.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 01/17/05
7
IS61C6416AL IS62C6416AL
IS64C6416AL IS65C6416AL
ISSI
-15 Min. Max. 15 12 12 0 0 12 12 12 9 0 -- 3 -- -- -- -- -- -- -- -- -- -- 6 -- -35 Min. Max. 35 25 25 0 0 25 25 25 20 0 -- 5 -- -- -- -- -- -- -- -- -- -- 20 -- -45 Min. Max. 45 35 35 0 0 35 35 35 25 0 -- 5 -- -- -- -- -- -- -- -- -- -- 20 -- Unit ns ns ns ns ns ns ns ns ns ns ns ns -- -- -- -- -- -- -- -- -- -- 6 --
(R)
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)
Symbol Parameter -12 Min. Max. 12 9 9 0 0 9 9 9 6 0 -- 3
tWC tSCE tAW tHA tSA tPWB tPWE1 tPWE2 tSD tHD
Write Cycle Time CE to Write End Address Setup Time to Write End Address Hold from Write End Address Setup Time LB, UB Valid to End of Write WE Pulse Width (OE =High) WE Pulse Width (OE=Low) Data Setup to Write End Data Hold from Write End
tHZWE(2) WE LOW to High-Z Output tLZWE(2) WE HIGH to Low-Z Output
Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1. 2. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the write.
8
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 01/17/05
IS61C6416AL IS62C6416AL
AC WAVEFORMS
IS64C6416AL IS65C6416AL
ISSI
t WC
(R)
WRITE CYCLE NO. 1 (WE Controlled)(1,2) WE
ADDRESS
VALID ADDRESS
t SA
CE
t SCE
t HA
WE
t AW t PWE1 t PWE2 t PBW
UB, LB
t HZWE
DOUT
DATA UNDEFINED
HIGH-Z
t LZWE
t SD
DIN
t HD
DATAIN VALID
UB_CEWR1.eps
Notes: 1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least one of the LB and UB inputs being in the LOW state. 2. WRITE = (CE) [ (LB) = (UB) ] (WE).
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 01/17/05
9
IS61C6416AL IS62C6416AL
IS64C6416AL IS65C6416AL
ISSI
t WC
VALID ADDRESS
(R)
WRITE CYCLE NO. 2 (OE is HIGH During Write Cycle) (1,2)
ADDRESS
t HA
OE
CE
LOW
t AW t PWE1
WE
t SA
UB, LB
t PBW
t HZWE
DOUT
DATA UNDEFINED
HIGH-Z
t LZWE
t SD
DIN
t HD
DATAIN VALID
UB_CEWR2.eps
WRITE CYCLE NO. 3 (OE is LOW During Write Cycle) (1)
t WC
ADDRESS
VALID ADDRESS
OE CE
LOW
t HA
LOW
t AW t PWE2
WE
t SA
UB, LB
t PBW
t HZWE
DOUT
DATA UNDEFINED
HIGH-Z
t LZWE
t SD
DIN
t HD
DATAIN VALID
UB_CEWR3.eps
Notes: 1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the High-Z state if OE VIH.
10
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 01/17/05
IS61C6416AL IS62C6416AL
IS64C6416AL IS65C6416AL
ISSI
t WC
ADDRESS 2
(R)
WRITE CYCLE NO. 4 (UB/LB Back to Back Write)
t WC
ADDRESS
ADDRESS 1
OE
t SA
CE
LOW
WE
t HA t SA t PBW t PBW
WORD 2
t HA
UB, LB
WORD 1
t HZWE
DOUT
HIGH-Z
t LZWE t HD
DATAIN VALID
DATA UNDEFINED
t SD
DIN
t SD
DATAIN VALID
t HD
UB_CEWR4.eps
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 01/17/05
11
IS61C6416AL IS62C6416AL
IS64C6416AL IS65C6416AL
ISSI
Min. 2.0 Com. Ind. Auto. typ. (1) -- -- -- 50 0 -- -- ns ns Max. 5.5 90 100 125 Unit V A
(R)
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter VDD for Data Retention Data Retention Current Test Condition See Data Retention Waveform VDD = 2.0V, CE VDD - 0.2V VIN VDD - 0.2V, or VIN VSS + 0.2V
VDR
IDR
tSDR tRDR
Note:
Data Retention Setup Time Recovery Time
See Data Retention Waveform See Data Retention Waveform
tRC
1. Typical Values are measured at VDD = 5V, TA = 25oC and not 100% tested.
CE DATA RETENTION WAVEFORM (CE Controlled)
tSDR VDD 4.5V Data Retention Mode tRDR
2.2V
VDR CE VDD - 0.2V
CE GND
12
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 01/17/05
IS61C6416AL IS62C6416AL
IS64C6416AL IS65C6416AL
ISSI
Package 400-mil Plastic SOJ 44-pin TSOP-II
(R)
ORDERING INFORMATION: IS61C6416AL Commercial Range: 0C to +70C
Speed (ns) 12 Order Part No. IS61C6416AL-12K IS61C6416AL-12T
Industrial Range: -40C to +85C
Speed (ns) 12 Order Part No. IS61C6416AL-12KI IS61C6416AL-12KLI IS61C6416AL-12TI IS61C6416AL-12TLI Package 400-mil Plastic SOJ 400-mil Plastic SOJ, Lead-free 44-pin TSOP-II 44-pin TSOP-II, Lead-free
ORDERING INFORMATION: IS64C6416AL Automotive Range: -40C to +125C
Speed (ns) 15 Order Part No. IS64C6416AL-15KA3 IS64C6416AL-15TA3 Package 400-mil Plastic SOJ 44-pin TSOP-II
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 01/17/05
13
IS61C6416AL IS62C6416AL
IS64C6416AL IS65C6416AL
ISSI
(R)
ORDERING INFORMATION: IS62C6416AL Commercial Range: 0C to +70C
Speed (ns) 35 35 Order Part No. IS62C6416AL-35K IS62C6416AL-35T Package 400-mil Plastic SOJ 44-pin TSOP-II
Industrial Range: -40C to +85C
Speed (ns) 35 35 Order Part No. IS62C6416AL-35KI IS62C6416AL-35TI Package 400-mil Plastic SOJ 44-pin TSOP-II
ORDERING INFORMATION: IS65C6416AL Automotive Range: -40C to +125C
Speed (ns) 45 45 Order Part No. IS65C6416AL-45KA3 IS65C6416AL-45TA3 Package 400-mil Plastic SOJ 44-pin TSOP-II
14
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. A 01/17/05
PACKAGING INFORMATION
400-mil Plastic SOJ Package Code: K
ISSI
Notes: 1. Controlling dimension: millimeters. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Reference document: JEDEC MS-027.
(R)
N
N/2+1
E1
E
1
N/2
D A
SEATING PLANE
b
C A2
e
B
A1
E2
Symbol No. Leads A A1 A2 B b C D E E1 E2 e
Millimeters Inches Min Max Min Max (N) 28 3.25 3.75 0.128 0.148 0.64 -- 0.025 -- 2.08 -- 0.082 -- 0.38 0.51 0.015 0.020 0.66 0.81 0.026 0.032 0.18 0.33 0.007 0.013 18.29 18.54 0.720 0.730 11.05 11.30 0.435 0.445 10.03 10.29 0.395 0.405 9.40 BSC 0.370 BSC 1.27 BSC 0.050 BSC
Millimeters Min Max 32 3.25 3.75 0.64 -- 2.08 -- 0.38 0.51 0.66 0.81 0.18 0.33 20.82 21.08 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC
Inches Min Max 0.128 0.148 0.025 -- 0.082 -- 0.015 0.020 0.026 0.032 0.007 0.013 0.820 0.830 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC
Millimeters Min Max 36 3.25 3.75 0.64 -- 2.08 -- 0.38 0.51 0.66 0.81 0.18 0.33 23.37 23.62 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC
Inches Min Max 0.128 0.148 0.025 -- 0.082 -- 0.015 0.020 0.026 0.032 0.007 0.013 0.920 0.930 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC
Copyright (c) 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. F 10/29/03
PACKAGING INFORMATION
ISSI
Millimeters Min Max 42 3.25 3.75 0.64 -- 2.08 -- 0.38 0.51 0.66 0.81 0.18 0.33 27.18 27.43 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC Inches Min Max 0.128 0.148 0.025 -- 0.082 -- 0.015 0.020 0.026 0.032 0.007 0.013 1.070 1.080 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC Millimeters Min Max 44 3.25 3.75 0.64 -- 2.08 -- 0.38 0.51 0.66 0.81 0.18 0.33 28.45 28.70 11.05 11.30 10.03 10.29 9.40 BSC 1.27 BSC 0.128 0.148 0.025 -- 0.082 -- 0.015 0.020 0.026 0.032 0.007 0.013 1.120 1.130 0.435 0.445 0.395 0.405 0.370 BSC 0.050 BSC Inches Min Max
(R)
Millimeters Inches Symbol Min Max Min Max No. Leads (N) 40 A 3.25 3.75 0.128 0.148 A1 0.64 -- 0.025 -- A2 2.08 -- 0.082 -- B 0.38 0.51 0.015 0.020 b 0.66 0.81 0.026 0.032 C 0.18 0.33 0.007 0.013 D 25.91 26.16 1.020 1.030 E 11.05 11.30 0.435 0.445 E1 10.03 10.29 0.395 0.405 E2 9.40 BSC 0.370 BSC e 1.27 BSC 0.050 BSC
Copyright (c) 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
2
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. F 10/29/03
PACKAGING INFORMATION
Plastic TSOP Package Code: T (Type II)
ISSI
Notes: 1. Controlling dimension: millimieters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane.
(R)
N
N/2+1
E1
E
1 D
N/2
SEATING PLANE
ZD
A
.
e b L A1 C
Symbol Ref. Std. No. Leads A A1 b C D E1 E e L ZD
Millimeters Min Max
Inches Min Max
Plastic TSOP (T - Type II) Millimeters Inches Min Max Min Max 44 -- 1.20 -- 0.047 0.05 0.15 0.002 0.006 0.30 0.45 0.012 0.018 0.12 0.21 0.005 0.008 18.31 18.52 0.721 0.729 10.03 10.29 0.395 0.405 11.56 11.96 0.455 0.471 0.80 BSC 0.032 BSC 0.41 0.60 0.016 0.024 0.81 REF 0.032 REF 0 5 0 5
Millimeters Min Max 50 -- 1.20 0.05 0.15 0.30 0.45 0.12 0.21 20.82 21.08 10.03 10.29 11.56 11.96 0.80 BSC 0.40 0.60 0.88 REF 0 5
Inches Min Max
(N) 32 -- 1.20 -- 0.047 0.05 0.15 0.002 0.006 0.30 0.52 0.012 0.020 0.12 0.21 0.005 0.008 20.82 21.08 0.820 0.830 10.03 10.29 0.391 0.400 11.56 11.96 0.451 0.466 1.27 BSC 0.050 BSC 0.40 0.60 0.016 0.024 0.95 REF 0.037 REF 0 5 0 5
-- 0.047 0.002 0.006 0.012 0.018 0.005 0.008 0.820 0.830 0.395 0.405 0.455 0.471 0.031 BSC 0.016 0.024 0.035 REF 0 5
Copyright (c) 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. F 06/18/03

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